Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf_0.5Zr_0.5O₂ heterostructure

The magneto-electric coupling (MEC) effect has been considered an effective method for the voltages controlled magnetic anisotropy in traditional ferroelectric/ferromagnetic structures. Unlike perovskite ferroelectrics, ferroelectric hafnium-based oxides hold great potential use complementary metal oxide semiconductors (CMOS) circuit with advantages of CMOS compatibility and easy scaled-down lower leakage current. In this article, MEC effects PtCoRu/Hf0.5Zr0.5O2 (HZO) heterostructure have investigated using polar magneto-optical Kerr microscopy anomalous Hall effect. major modification perpendicular PtCoRu thin film was obviously within ±4 V polarized Hf0.5Zr0.5O2 film, accompanying coercivity field remnant magnetization significantly decreased. bar devices were also effectively under ±3 voltages. Such a finding proposes more optimized logic gates memories based on voltage-controlled future.